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SiC Scribing with High-Power Picosecond Lasers and The Advantages of Timeshift Programmable Pulse Capability

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SiC Scribing with High-Power Picosecond Lasers and The Advantages of Timeshift Programmable Pulse Capability

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The semiconductor substrate material silicon carbide (SiC) has generated intense interest amongst electric vehicle (EV) and power electronics manufacturers because it offers many advantages over traditional silicon electronics for these applications. But SiC has very different material characteristics from silicon, which means that many of the current IC fabrication processes do not work the same way with SiC-or they do not work at all. This testing shows that UV picosecond lasers can produce very high-quality scribes in SiC wafers. Plus, it clearly proves the benefits of TimeShift pulse burst programming. In particular, it demonstrates that higher pulse counts deliver both better scribe quality and also higher feed rates

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