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High-speed fabrication of laser doping selective emitter solar cells using 532nm continuous wave (cw) and modelocked quasi-cw laser sources

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High-speed fabrication of laser doping selective emitter solar cells using 532nm continuous wave (cw) and modelocked quasi-cw laser sources

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  • Author: J.M. Bovatsek, A. Sugianto, B. Hallam, B. Tjahjono, S. Wenham, R.S. Patel
With various analysis techniques, combined with the cell performance data, a fairly clear picture of the LDSE processing performance has been created for the three lasers that were tested. In the first study, there was a definite advantage demonstrated by the 532-nm continuous wave Millennia Prime laser. Using the same output power, beam focus size, and scan speeds (2, 6 m/s), consistently higher cell performance was achieved. This may be due to the difference in junction depths, with those generated by the 532-nm CW laser source being ~10 – 20% deeper. Since this depth disparity is on the order of several hundred nanometers; and considering that it is observed to increase along with the scan speed, it can likely be explained by the greater optical absorption depth of the 532-nm light—which is about 1 µm compared to ~10 nm for 355-nm).

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