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Highest-speed dicing of thin silicon wafers with nanosecond-pulse 355nm q-switched laser source using line-focus fluence optimization technique

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Highest-speed dicing of thin silicon wafers with nanosecond-pulse 355nm q-switched laser source using line-focus fluence optimization technique

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  • Author: James M. Bovatsek, Rajesh S. Patel
Using a line-focus, fluence optimization technique, highest-speed dicing of thin silicon wafers has been demonstrated. With a 9-μm minor axis beam diameter and 18 W laser power on-target, full-cut scan speed for 100- μm thick silicon wafers was found to be between 350 and 400 mm/s. To our knowledge, this is the fastest cutting speed demonstrated to date with a ns-pulse, 355-nm DPSS q-switched laser source. For a range of silicon thicknesses, the fastest cutting speed and optimal ellipticity for achieving this speed has been determined. Cutting >50-μm deep in silicon was achieved with 1-m/s scan speed; and an extrapolation of data trend

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