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Thin film removal mechanisms in ns-laser processing of photovoltaic materials

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Thin film removal mechanisms in ns-laser processing of photovoltaic materials

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  • Author: J. Bovatsek, A. Tamhankar, R.S. Patel, N.M. Bulgakova, J. Bonse
Threshold-dependence on pulsed duration (8 ns–40 ns) for various thin film photovoltaic scribe processes (P1, P2, and P3) has been characterized, with selected scribes also being tested for wavelength dependence (1064 nm vs. 532 nm). For SnO2 and molybdenum P1 scribing, there is no clear trending of film removal threshold with pulse duration; likewise, there is no clear advantage of using 532 nm over 1064 nm wavelength, or vice versa, in terms of the expected processing efficiency. However, threshold-dependence on pulse duration was clearly demonstrated for the a-Si P2 and P3 scribes (532 nm wavelength), with a noteworthy advantage for shorter pulses. Compared to 40 ns pulses, 10 ns pulses can process these films at ∼50% lower energy densities, thus allowing for increased processing efficiency, reduced thermal loading of the substrate, and lower overall manufacturing costs for thin film photovoltaic devices.

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