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Effects of pulse duration on the ns-laser pulse induced removal of thin film materials used in Photovoltaics

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Effects of pulse duration on the ns-laser pulse induced removal of thin film materials used in Photovoltaics

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  • Author: Jim Bovatsek, Ashwini Tamhankara, Raj Patela, Nadezhda M. Bulgakovab, Jörn Bonsec
Threshold-dependence on pulsed duration (8 ns – 40 ns) for various thin film photovoltaic scribe processes (P1, P2, P3) has been characterized, with selected scribes also being tested for wavelength dependence (1064 nm vs. 532 nm). For SnO2 and Molybdenum P1 scribing, there is no clear trending of film removal threshold with pulse duration; likewise, there is no clear advantage of using 532-nm over 1064-nm wavelength, or vice versa, in terms of the expected processing efficiency. However, threshold-dependence on pulse duration was clearly demonstrated for the a-Si P2 and P3 scribes with the 532-nm wavelength, with a noteworthy advantage for shorter pulses. Compared to 40-ns pulses, 10-ns pulses can process these films at ~50% lower energy densities, thus allowing for increased processing efficiency, reduced thermal loading of the substrate, and lower overall manufacturing costs for thin film photovoltaic devices.

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