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Laser-Doped Selective Emitters (LDSE) With a Green CW Laser

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Laser-Doped Selective Emitters (LDSE) With a Green CW Laser

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Crystalline-Silicon (c-Si) solar cells continue to be a leader amongst the various competing solar cell technologies. Reasons for this include stable supply of silicon, well-developed manufacturing processes, and, of course, the high and growing conversion efficiencies that can be achieved. Here, we report on Laser Doped Selective Emitters (LDSE) – a relatively straightforward, laser-based manufacturing process that has been shown to generate absolute cell efficiency gains of 1–2% over conventional cells. A conventional p-type wafer c-Si solar cell has a thin but heavily-doped n++ region of silicon on the front surface. This region, generated via hightemperature phosphorus gas furnace diffusion, forms a p-n junction, directing current flow into a grid pattern of thin conducting strips on the cell surface. These are referred to as finger lines, and consist of a metallic paste material that is screen printed onto the cell surface and subsequently “baked-in” at high-temperature, creating electrical contacts to the heavily-doped n++ emitter region of the cell.

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