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LED Sapphire Wafer Scribing Using 355 nm Lasers

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LED Sapphire Wafer Scribing Using 355 nm Lasers

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With the increasing demand for more energy-efficient lighting alternatives, light-emitting diodes (LEDs) are becoming one of the most widely used optoelectronic devices today. LEDs are used in traffic control, automotive headlights, consumer electronics, display technology, transportation, photosensor, mobile device and general illumination applications. Indium gallium nitride (InGaN)-based LED devices are commonly fabricated on a single crystal sapphire (Al 2O3) substrate that has excellent thermal conductivity. A typical two-inch LED wafer contains several thousands of LED devices. The street width available between LED active devices are very narrow, typically 20–50 mm.

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