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Extreme UV Photolithography

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Extreme UV Photolithography

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EUV lithography is being developed to fulfill single-exposure patterning requirements at feature sizes below 22 nm (Figure 1). Unique to this technology is the nature of the light source. There is no readily available conventional light source having a wavelength below 157 nm which is the wavelength of light from a F2 excimer laser. The F2 excimer laser source has not gained broad use for lithography at small feature sizes. This is probably due to factors including difficulties with the required CaF2 optics, e.g. increased mask registration errors due to birefringence, and the success of the extension of 193 nm patterning technology that allowed it to function down to the single-exposure limit of 157 nm lithography, i.e., 32 nm. Instead, lithography equipment developers have turned to an entirely new way of generating light at EUV wavelengths for use in lithography at sub-32 nm feature sizes.

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