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Accelerated Aging Test of 1310 nm Laser Diodes

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Accelerated Aging Test of 1310 nm Laser Diodes

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  • Author: Lawrence A. Johnson
This accelerated aging test was performed on telecommunications grade 1310 nm edge emitting laser diodes. Tests were conducted in an ILX Lightwave LRS-9424 Laser Reliability and Burn-In Test system. Devices were mounted in a standard 32 device fixture with an external InGaAs photodiode array calibrated for 5mW full scale range. The devices under test were subjected to two sequential 500 hour accelerated aging tests, the first at 60°C and the second at 85°C. Both tests were conducted in constant power (APC) mode at the laser diodes optical output power of 5 mW.

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