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Measuring High Power Laser Diode Junction Temperature and Package Thermal Impedance

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Measuring High Power Laser Diode Junction Temperature and Package Thermal Impedance

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  • Author: Lawrence A. Johnson, Andrew The
Laser diode operating characteristics and life time are greatly affected by the temperature of the semiconductor junction. This is particularly true for high power laser diodes in which several watts of waste heat must be removed from a small semiconductor laser chip. In this case die bond quality and package thermal impedance are critical to achieving good device performance. During production, chip burn-in temperature must be accurately controlled in order to ensure adequate screening of defective devices is achieved without excessive loss of good devices. A simple, accurate method for measuring junction temperature and heat sink-to-chip thermal impedance is needed to enable the development and production of high power laser diodes. This article presents a simple cw method based on the use of readily available test and measurement instrumentation.

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