Optical Emission in Semiconductor Materials

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Optical Emission in Semiconductor Materials

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Fundamental radiation processes that occur within semiconductor materials are shown in Figure 1. It also shows the response of a biased p-n junction diode for each process. Absorption produces electron-hole pairs and is the fundamental process exploited in semiconductor photodiodes where the junction is typically reverse biased. In contrast, electroluminescence (or electron-hole recombination radiation following electrical injection) occurs when a p-n junction is forward biased. This radiation is equivalent to spontaneous emission and leads to optical emission in an LED. This recombination radiation can also generate stimulated emission and, if the gain produced in the junction can overcome the optical losses (including absorption), lasing will occur in a laser diode. The evolution of this emission as a function of injection current, the mechanisms for efficient light extraction, and the typical device geometries employed for both LEDs and laser diodes are the subjects of this section.

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