SMBB760D-2100S-I

LED by Marubeni

Note: Your Quotation Request will be directed to Marubeni.

The SMBB760D-2100S-I from Marubeni is an AlGaInP LED that operates at a wavelength of 750 nm - 770 nm. It delivers a power of 800 mW & 2000 mW (radiated) and has a half-width of 25 nm. This LED has a rise time of 50 ns and fall time of 100 ns. It has 2 chip pieces with a size of 1000 µm x 1000 µm. This LED includes a silver-plated copper lead frame die and silicone resin lens. It has a forward voltage of 5 V and dissipates 4000 mW of power. This LED is available in a surface mount PA9T resin package that measures 5 mm x 5.2 mm x 1 mm and is ideal for medical devices, safety devices, airplanes, aerospace equipment, automobiles, traffic control systems & nuclear reactor control system applications.

Product Specifications

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Product Details

  • Part Number
    SMBB760D-2100S-I
  • Manufacturer
    Marubeni
  • Description
    750 nm - 770 nm, AlGaInP LED for Automobile Applications

General Parameters

  • Chip Technology
    AlGaInP
  • Colors
    Infrared
  • Configuration
    Chip
  • lens type
    Silicone Resin
  • Peak Pulse Current
    2000 mA
  • Power Dessipation
    4000 mW
  • Thermal Resistance
    10 K/W
  • Forward Voltage
    4 to 5 V
  • Forward Current
    800 mA
  • Wavelength
    750 to 770 nm
  • Power
    800 to 2000 mW
  • Reverse Voltage
    10 V
  • Note
    Half Width: 25 nm, Rise Time: 50 ns, Fall Time: 100 ns

Physical Properties

  • Package
    Surface Mount
  • Package Type
    Surface Mount
  • Size
    1000 x 1000 µm

Environmental Conditions

  • Junction Temperature
    120 Degree C
  • Soldering Temperature
    250 Degree C
  • Operating Temperature
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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