C30659-1060-R8BH

Photodetector by Excelitas Technologies

Note: Your Quotation Request will be directed to Excelitas Technologies.

The C30659-1060-R8BH from Excelitas Technologies is a Photodetector with Wavelength Range 400 to 1100 nm, Supply Voltage 275 to 425 V, Rise Time 2 ns, Bandwidth 175 to 200 MHz, Active Area Diameter 0.8 mm. More details for C30659-1060-R8BH can be seen below.

Product Specifications

Product Details

  • Part Number
    C30659-1060-R8BH
  • Manufacturer
    Excelitas Technologies
  • Description
    400 to 1100 nm TO-Can Photovoltaic Photodetector

General Parameters

  • Photodetector Material
    Silicon
  • Operation Mode
    Photovoltaic
  • Package Type
    TO-Can
  • Spectral Band
    Visible, Near-IR
  • Wavelength Range
    400 to 1100 nm
  • Active Area
    0.5 x 0.5 mm2
  • Photodetector Type
    Avalanche, PIN
  • Supply Voltage
    275 to 425 V
  • Rise Time
    2 ns
  • Configuration
    Single
  • Bandwidth
    175 to 200 MHz
  • Active Area Diameter
    0.8 mm
  • Voltage Responsivity
    200 to 370 kV/W
  • Fall Time
    2 ns
  • Impedance
    33 to 50 Ohms
  • Noise equivalent power(NEP)
    55 to 150 fW/vHz
  • Package
    TO-8
  • Power Dissipation
    150 mW
  • Rise Fall Time
    2 ns
  • RoHS
    Yes
  • Supply Current
    20 to 35 mA (Positive), 10 to 20 mA (Negative)
  • Temperature Coefficient
    2.2 V/Degree C
  • Note
    Output spectral noise voltage: 20 to 30 nV/vHz

Environmental Conditions

  • Operating Temperature display
    -40 to 70 Degree C
  • Storage Temperature
    -50 to 100 Degree C

Applications

  • Application
    LIDAR, Range Finding, Laser Designation, Confocal Microscopy, High-Speed, Extreme Low-Light Detection, Distributed Temperature Sensing (DTS), Analytical Instrumentation, High-Speed, Free-Space Optical, Communication

Technical Documents

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