PDB-C109

Photodiode by Advanced Photonix

Note: Your Quotation Request will be directed to Advanced Photonix.

The PDB-C109 from Advanced Photonix is a Photodiode with Wavelength Range 350 to 1100 nm, Capacitance 140 to 150 pF, Dark Current 5 to 15 nA, Responsivity/Photosensitivity 0.56 A/W, Rise Time 7 to 13 µs. More details for PDB-C109 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PDB-C109
  • Manufacturer
    Advanced Photonix
  • Description
    42.9 mm Active Area Photoconductive Silicon PIN Photodiode with TO-8 Package

Applications

  • Application
    Industrial, Medical

General Parameters

  • Breakdown Voltage
    30 V
  • Module
    No
  • Noise equivalent power(NEP) :
    5 x 10-13 W/vHz
  • Package
    TO-8
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    350 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    30 V
  • Rise/Fall Time
    7 to 13 µs
  • RoHs
    Yes
  • Shunt Resistance
    30 to 100 MOhms
  • Spectral Band
    Visible to Near-IR
  • Capacitance
    140 to 150 pF
  • Dark Current
    5 to 15 nA
  • Responsivity/Photosensitivity
    0.56 A/W
  • Rise Time
    7 to 13 µs
  • Note
    Load Resistance: 50 kOhms

Physical Properties

  • Active Area
    42.9 mm2
  • Dimensions
    8.1 x 5.3 mm (Active area)

Temperature

  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

Click to view more product details on manufacturer's website
Request a Quote