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The AXUV63HS1 from Opto Diode Corporation is a Photodiode that operates at a wavelength of 200 nm - 1100 nm. It has a circular active area of 63 mm2 and rise time of less than 10 ns. This photodiode has a dark current of up to 100 nA, capacitance of 700 pF, and reverse breakdown voltage over 160 V. It has protective cover plate and is available in a package that measures 16.5 mm x 15 mm. This photodiode is ideal for electron detection applications.

Product Specifications

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Product Details

  • Part Number
    AXUV63HS1
  • Manufacturer
    Opto Diode Corporation
  • Description
    200 nm - 1100 nm, Photodiode for Electron Detection Applications

Applications

  • Application
    Electron Detection

General Parameters

  • Breakdown Voltage
    160 V
  • Configuration
    Single
  • Channels
    Single
  • Module
    No
  • Package
    Through-Hole
  • Package Type
    Through-Hole
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    Below 150 nm
  • Reverse Voltage
    160 V
  • Capacitance
    1 nF( 0 V), 85 pF(150 V)
  • Dark Current
    100 nA
  • Responsivity/Photosensitivity
    0.05 to 0.25 A/W
  • Rise Time
    10 nsec

Physical Properties

  • Active Area
    9 x 9 mm2, 63 x 63 mm2
  • Active Area Diameter
    9 mm2, 63 mm2

Temperature

  • Operating Temperature
    -10 to 40 Degree C

Technical Documents

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