PDB-C613-2

Photodiode by Advanced Photonix

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The PDB-C613-2 from Advanced Photonix is a Photodiode with Wavelength Range 350 to 1100 nm, Capacitance 350 pF, Dark Current 90 to 180 nA, Responsivity/Photosensitivity 0.69 A/W, Rise Time 50 ns. More details for PDB-C613-2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PDB-C613-2
  • Manufacturer
    Advanced Photonix
  • Description
    88 mm Solderable Die Silicon Photodiode

Applications

  • Application
    Optical Encoder, Position Sensor, Industrial Controls, Instrumentation

General Parameters

  • Breakdown Voltage
    25 to 50 V
  • Module
    No
  • Noise equivalent power(NEP) :
    3 x 10-13 W/vHz
  • Package
    Die
  • Package Type
    Die
  • Operation Mode
    Photoconductive
  • Wavelength Range
    350 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Response Time :
    50 ns
  • Reverse Voltage
    50 V
  • Rise/Fall Time
    50 ns
  • RoHs
    Yes
  • Short Circuit Current
    0.7 to 1 mA
  • Shunt Resistance
    0.5 to 1 MOhms
  • Spectral Band
    Ultraviolet, Infrared, Visible
  • Capacitance
    350 pF
  • Dark Current
    90 to 180 nA
  • Responsivity/Photosensitivity
    0.69 A/W
  • Rise Time
    50 ns
  • Note
    Load Resistance: 1 kOhms

Physical Properties

  • Active Area
    88 mm2
  • Dimensions
    9.7 x 9.1 mm (Active area)
  • Window Material
    Silicon, Quartz

Temperature

  • Operating Temperature
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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