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The GAP1000/2.2 from GPD Optoelectronics is a Photodiode with Wavelength Range 2 µm, Bandwidth 3.18 MHz, Capacitance 1000 pF, Dark Current 10 µm, Responsivity/Photosensitivity 0.9 to 1.0 A/W. More details for GAP1000/2.2 can be seen below.
200 nm - 1100 nm, Photodiode for Electron Detection Applications
800 nm - 2600 nm, InGaAs PIN Photodiode for LiDAR Applications
400 nm - 1000 nm, Si Avalanche Photodiode for Fluorescence Applications
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