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The GAV40 from GPD Optoelectronics is a Photodiode with Wavelength Range 800 to 1800 nm, Capacitance 0.8 to 1 pF, Dark Current 0.10 to 0.2 µA, Responsivity/Photosensitivity 0.76 to 0.84 A/W. More details for GAV40 can be seen below.
200 nm - 1100 nm, Photodiode for Electron Detection Applications
800 nm - 2600 nm, InGaAs PIN Photodiode for LiDAR Applications
400 nm - 1000 nm, Si Avalanche Photodiode for Fluorescence Applications
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