Note: Your Quotation Request will be directed to LD-PD Inc.
The GE-10X10-TO9 from LD-PD Inc is a Photodiode with Wavelength Range 800 to 1800 nm, Capacitance 80 to 135 nF (Junction), Dark Current 50 µA. More details for GE-10X10-TO9 can be seen below.
200 nm - 1100 nm, Photodiode for Electron Detection Applications
800 nm - 2600 nm, InGaAs PIN Photodiode for LiDAR Applications
400 nm - 1000 nm, Si Avalanche Photodiode for Fluorescence Applications
Our Newsletters keep you up to date with the Photonics Industry.
By signing up for our newsletter you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
