OSD002-IC

Photodiode by OTRON

Note: Your Quotation Request will be directed to OTRON.

The OSD002-IC from OTRON is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 7.8 to 28 pF, Dark Current 100 to 1300 pA, Responsivity/Photosensitivity 0.38 to 0.64 A/W, Rise Time 14 ns. More details for OSD002-IC can be seen below.

Product Specifications

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Product Details

  • Part Number
    OSD002-IC
  • Manufacturer
    OTRON
  • Description
    Red Enchanced Silicon Photodiode

Applications

  • Application
    Analytical instruments, Precision photometry, Fluorescence detector, IR/ Laser light Monitoring, Optical measurement equipment, Medical equipment, Spectrophotometry/CT scan

General Parameters

  • Configuration
    Single
  • Channels
    Single
  • Detectivity
    5.55 x 1013 cm(Hz/W)1/2
  • Module
    No
  • Noise equivalent power(NEP) :
    3.19 x 10 -14 W/Hz 1/2
  • Package
    Ceramic Stem
  • Package Type
    Ceramic
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon
  • Reverse Bias Voltage
    50 V
  • Reverse Voltage
    50 V
  • RoHs
    Yes
  • Short Circuit Current
    17 µA
  • Shunt Resistance
    0.1 GOhms
  • Capacitance
    7.8 to 28 pF
  • Dark Current
    100 to 1300 pA
  • Responsivity/Photosensitivity
    0.38 to 0.64 A/W
  • Rise Time
    14 ns
  • Note
    316 mV(open circuit voltage)

Physical Properties

  • Active Area
    Ø2 mm2

Temperature

  • Operating Temperature
    -40 to 80 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    0.18 times/Degree C

Technical Documents

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