VEMD5010X01

Photodiode by Vishay Intertechnology

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The VEMD5010X01 from Vishay Intertechnology is a Photodiode with Wavelength Range 430 to 1100 nm, Capacitance 25 to 70 pF, Dark Current 2 to 30 nA, Rise Time 100 ns. More details for VEMD5010X01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    VEMD5010X01
  • Manufacturer
    Vishay Intertechnology
  • Description
    Silicon PIN Photodiode from 430 to 1100 nm

Applications

  • Application
    High speed photo detector

General Parameters

  • Breakdown Voltage
    20 V
  • Configuration
    Single
  • Detector Sensitivity :
    ±65 Degree (Angle of half sensitivity)
  • Fall Time
    100 ns
  • Forward Voltage
    1 to 1.3 V
  • Module
    No
  • Noise equivalent power(NEP) :
    4 x 10-14 W/vHz
  • Package
    Surface Mount
  • Package Type
    Surface Mount
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    430 to 1100 nm
  • Photodiode Material
    Silicon
  • Power Dissipation
    215 mW
  • Reverse Current
    40 to 48 µA
  • Reverse Voltage
    20 V
  • Rise/Fall Time
    100 ns
  • RoHs
    Yes
  • Short Circuit Current
    45 µA
  • Spectral Band
    VIS-NIR
  • Capacitance
    25 to 70 pF
  • Dark Current
    2 to 30 nA
  • Rise Time
    100 ns

Physical Properties

  • Active Area
    7.5 mm2
  • Dimensions
    5 x 4 x 0.9 mm (L x W x H)

Temperature

  • Operating Temperature display
    -40 to 110 Degree C
  • Storage Temperature
    -40 to 110 Degree C
  • Temperature Coefficient
    0.1 %/K

Technical Documents

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