Photodiodes from Manufacturers in United States - Page 15

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 15 of 79
320-1100 nm, Cathode Grounded, Mounted Silicon Photodiode

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
20 to 100 nA
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode for Signal Detection Applications

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.2 A/W
Package Type:
TO-Can, Leaded
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 790 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
790 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
17 to 48 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
InGaAs PIN photodiode from 0.9 to 1.7 µm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 2 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
more info
970 nm Surface Mount Photodiodes with 12 to 65 pF Capacitance

Product Specs

Wavelength Range:
970 nm (Peak)
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
12 to 65 pF
Responsivity/Photosensitivity:
0.15 to 0.20 A/W
Package Type:
Surface Mount
more info

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photoconductive
Dark Current:
0.10 to 0.2 µA
Capacitance:
0.8 to 1 pF
Responsivity/Photosensitivity:
0.76 to 0.84 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
210 to 280 nm GaN UV Photodiode with TO-46 Package

Product Specs

Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
210 to 280 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.05 A/W
Package Type:
TO-Can
Module:
No
more info
970 nm Surface Mount Photodiodes with 7.25 mm Active Area

Product Specs

Wavelength Range:
970 nm (Peak)
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
12 to 65 pF
Responsivity/Photosensitivity:
0.55 to 0.6 A/W
Package Type:
Surface Mount
more info
600 to 1750 nm InGaAs PIN Photodiodes with 0.03 to 57 nA Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 57 nA
Capacitance:
55 to 75 pF
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
Module:
No
more info
InGaAs PIN Photodiode Chip, Active Area 300um

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
5 to 6 pF
Responsivity/Photosensitivity:
0.88 to 0.98 A/W
Package Type:
Chip
Module:
Yes
more info
Thermoelectrically Cooled Extended InGaAs Photodiodes

Product Specs

Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
1200 to 2600 nm
Operation Mode:
Photovoltaic
Dark Current:
5000 to 50000 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.9 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon photodiode from 200 to 1100 nm

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
250 pA
Capacitance:
3 nF
Responsivity/Photosensitivity:
0.038 to 0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Multi-channel PbSe uncooled detector with filters

Product Specs

Photodiode Material:
Pbse
Wavelength Range:
3.6 to 3.8 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
Peak wavelength: 980 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 20 nA
Capacitance:
24 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
InGaAs Detector, 120µm Dia, TO-46

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 µA
Capacitance:
3000 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
220 to 320 nm GaN UV Photodiode with TO-46 Package

Product Specs

Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
220 to 320 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.12 A/W
Package Type:
TO-Can
Module:
No
more info
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