Photodiodes from Manufacturers in United States - Page 16

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 16 of 79
400 ns Rise Time, 320 - 1100 nm, 1.1 mm x 1.1 mm Active Area Si Photodiode

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
2 pA
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
350 to 1100 nm Quadrant Backscatter Photodiodes with TO-Can Package

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
TO-Can
Channels:
Quad
more info
600 to 1750 nm InGaAs PIN Photodiodes with 0.025 to 16 nA Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.025 to 16 nA
Capacitance:
10 to 12 pF
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
Module:
No
more info
InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 75um

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.63 to 0.75 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
350 to 1100 nm PIN Photodiodes with 0.81 mm Active Area

Product Specs

Photodetector Type:
PIN
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
2 to 30 nA
Capacitance:
2 to 10 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Surface Mount, Ceramic
more info
Thermoelectrically Cooled Extended InGaAs Photodiodes

Product Specs

Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
1200 to 2570 nm
Operation Mode:
Photovoltaic
Dark Current:
7500 to 40000 nA
Capacitance:
800 pF
Responsivity/Photosensitivity:
0.9 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
InGaAs Avalanche Photodiode from 1000 to 1700 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
60 to 150 nA
Capacitance:
2.70 pF
Responsivity/Photosensitivity:
9.4 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
EUV & UV Detectors (SXUV & UVG Family)

Product Specs

Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Capacitance:
1.5 to 5 nF
Responsivity/Photosensitivity:
0.105 to 0.115 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
320-1100 nm, Cathode Grounded, Mounted Silicon Photodiode

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
20 to 100 nA
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
UV Enhanced Response, 35.0mm2, Silicon Detector

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photovoltaic
Capacitance:
1600 pF
Responsivity/Photosensitivity:
0.14 A/W
Package Type:
TO-Can, Leaded
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 430 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Silicon Avalanche photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Capacitance:
2.1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
2.05 µm
Operation Mode:
Photoconductive
Dark Current:
1 µA
Capacitance:
250 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
800 to 1700 nm Diameter InGaAs Photodiode with TO-5 Package

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 nA
Capacitance:
250 to 450 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
970 nm Surface Mount Photodiodes with 20 ns Rise Time

Product Specs

Wavelength Range:
970 nm (Peak)
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
12 to 65 pF
Responsivity/Photosensitivity:
0.55 to 0.6 A/W
Package Type:
Surface Mount
more info
600 to 1750 nm InGaAs PIN Photodiodes with 0.025 to 16 nA Current

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.025 to 16 nA
Capacitance:
10 to 12 pF
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
Surface Mount
Configuration:
Array
Channels:
Quad
Module:
No
more info
InGaAs PIN Photodiode Chip on Ceramic, Active Area 500um

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
Package Type:
Chip on Ceramic
Module:
No
more info
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