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C30662L-200

Photodiode by Excelitas Technologies
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The C30662L-200 from Excelitas Technologies is an InGaAs Avalanche Photodiode that operates from 1000 to 1700 nm. It has a breakdown voltage from 45 to 70 V and provides a responsivity of 9.4 A/W. The avalanche diode has a quantum efficiency of 75% and

Product Specifications

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Product Details

  • Part Number
    C30662L-200
  • Manufacturer
    Excelitas Technologies
  • Description
    InGaAs Avalanche Photodiode from 1000 to 1700 nm

Applications

  • Application
    LiDAR / ToF measurements, Eye-safe Laser range finding, High volume consumer applications, Optical time-domain reflectometer (OTDR), Optical communication systems, Laser scanning

General Parameters

  • Breakdown Voltage
    45 to 70 V
  • Configuration
    Single
  • Forward Current
    5 mA
  • Module
    No
  • Noise equivalent power(NEP) :
    0.09 pW/vHz
  • Package
    SMD package
  • Package Type
    Surface Mount
  • Photodetector Type
    Avalanche
  • Operation Mode
    Photoconductive
  • Wavelength Range
    1000 to 1700 nm
  • Photodiode Material
    InGaAs
  • Reverse Current
    0.4 mA
  • Rise/Fall Time
    0.4 ns
  • RoHs
    Yes
  • Bandwidth
    600 MHz
  • Capacitance
    2.70 pF
  • Dark Current
    60 to 150 nA
  • Responsivity/Photosensitivity
    9.4 A/W

Physical Properties

  • Active Area
    31420 µm
  • Active Area Diameter
    200 µm

Temperature

  • Operating Temperature
    -20 to 70 Degree C
  • Storage Temperature
    -60 to 125 Degree C
  • Temperature Coefficient
    0.14 to 0.20 V/Degree C

Technical Documents
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