Photodiodes from Manufacturers in United States - Page 20
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
Dual Band Si/InGaAs Detector, 4 µs Rise Time, 400 - 1700 nm, Ø2.54/Ø1.5 mm
350 to 1100 nm Quadrant Backscatter Photodiodes with TO-5 Package
800 to 2600 nm InGaAs PIN Photodiodes with 120 nA to 100 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
120 nA to 100 µA
Capacitance:
20 to 150 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
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InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 55um
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.3 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
more info
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Silicon-InGaAs Dual Sandwich Photodiode for Metal Processing Applications
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
more info
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InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 200 nA
Capacitance:
100 to 500 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
more info
Similar products from this company
Silicon photodiode from 400 to 1100 nm
Electron & Photon Detectors (AXUV Family) X-Ray and Radiation
UV Enhanced Response, 100.0mm2, Silicon Detector
Silicon PIN Photodiode from 870 to 1050 nm
InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
30 to 25 nA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
more info
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900 to 1700 nm Diameter InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 4 nA
Capacitance:
75 to 100 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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400 nm to 1100 nm / 950 nm - 1100 nm, Dual Sandwich Photodiode for Sensing Applications
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm (Silicon)/950 to 1100 nm (Silicon)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.45 A/W (Silicon)/0.12 A/W (Silicon)
more info
Similar products from this company
750 to 1750 nm InGaAs PIN Photodiodes with 0.25 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
750 to 1750 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.37 A/W
Package Type:
DIP / DIL / Thru-Hole
more info
Similar products from this company
InGaAs PIN Photodiode Chip, Active Area 1000um
286 - 300 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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