Photodiodes from Manufacturers in United States - Page 24

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 24 of 79
950/1300 nm Dual Sandwich Photodiode for Temperature Sensing Applications

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
800 to 2600 nm InGaAs PIN Photodiodes with 200 µA Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
200 µA
Capacitance:
280 to 960 pF
Responsivity/Photosensitivity:
1.07 A/W
Package Type:
TO-Can
Module:
No
more info
InGaAs PIN Photodiode

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
5000 nA
Capacitance:
1000 to 3000 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
InGaAs Avalanche Photodiode from 1100 to 1700 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 50 nA
Capacitance:
1.25 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area, FC/PC Bulkhead

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
35 pA
Capacitance:
0.94 pF
Responsivity/Photosensitivity:
0.48 A/W
Package Type:
Through-Hole, Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
EUV & UV Detectors (SXUV & UVG Family)

Product Specs

Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Dark Current:
30 nA
Capacitance:
4 to 10 nF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 nA
Capacitance:
24 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 780 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
17 to 48 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
GaAs PIN photodiode from 770 to 860 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
770 to 860 nm
Operation Mode:
Photovoltaic
Package Type:
Connectorized
Module:
No
more info

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
4 to 15 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
0.3 mm Diameter InGaAs Photodiode with Surface Mount Package

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
5 to 6 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
Surface Mount
Module:
No
more info
800 to 2600 nm InGaAs PIN Photodiodes with 250 nA to 300 µA Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
250 nA to 300 µA
Capacitance:
100 to 1500 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
TO-Can
Module:
No
more info
Silicon photodiode from 200 to 1100 nm

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
250 pA
Capacitance:
3 nF
Responsivity/Photosensitivity:
0.038 to 0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
AT2 Series - Two Stage Cooled PbS Packaged IR Detectors

Product Specs

Photodiode Material:
Pbse
Wavelength Range:
4.3 to 4.5 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
60 µA
Capacitance:
1800 pF
Responsivity/Photosensitivity:
0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 780 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 5 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
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