Photodiodes from Manufacturers in United States - Page 29

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 29 of 79
Solderable Chip Series Planar Diffused Silicon Photodiodes

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
40 nA
Capacitance:
30 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Ge Photodiode, 500 ns Rise Time, 800 - 1800 nm, Ø3 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 µA
Capacitance:
3250 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 750 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
InGaAs PIN photodiode from 1310 to 1550 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
InGaAs Photodiode, 14 ns Rise Time, 800-1700 nm, Ø2 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
50 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
1.04 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
30 to 250 nA
Capacitance:
3.2 to 4 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
2 mm Diameter InGaAs Quadrant Segmented Photodiodes with TO-5 Package

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 10 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
0.64 to 0.92 A/W
Package Type:
TO-Can
Channels:
Quad
Module:
No
more info
Large Active Area InGaAs Quadrants

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 100 nA
Capacitance:
225 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
800 to 2600 nm InGaAs PIN Photodiodes with 300 µA Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
300 µA
Capacitance:
85 to 1000 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
TO-Can
Module:
No
more info
Silicon photodiode from 330 to 720 nm

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
330 to 720 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
0.31 nF
Responsivity/Photosensitivity:
0.29 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
AP Series - Uncooled PbS Packaged IR Detectors

Product Specs

Photodiode Material:
Pbs
Wavelength Range:
2.2 to 2.4 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
InGaAs Photodiode, 25 ns Rise Time, 800-2600 nm, Ø1.0 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photovoltaic
Dark Current:
3 µA
Capacitance:
500 pF
Responsivity/Photosensitivity:
1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 750 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Silicon PIN photodiode from 200 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 20 pA
Capacitance:
4.5 to 33 pF
Responsivity/Photosensitivity:
0.08 to 0.44 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
5 µA
Capacitance:
35000 pF
Responsivity/Photosensitivity:
0.26 to 0.87 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
120 to 1000 nm Avlanche Photodiodes with 16 mm Diameter

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
120 to 1000 nm
Operation Mode:
Photovoltaic
Dark Current:
600 nA
Capacitance:
130 pF
Responsivity/Photosensitivity:
25 to 35 A/W
Package Type:
Connectorized
Module:
No
more info
Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Quad
Module:
No
more info
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