Photodiodes from Manufacturers in United States - Page 33

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 33 of 79
Ge Photodiode, 500 ns Rise Time, 800 - 1800 nm, Ø3 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 µA
Capacitance:
3250 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
15 mm2 Photodiode in TO-5 Hermetic Pkg

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
450 nm
Operation Mode:
Photoconductive
Dark Current:
4 to 10 nA
Capacitance:
30 pF
Responsivity/Photosensitivity:
.020 to 0.28 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 430 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
3.6 to 12 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
InGaAs PIN photodiode from 1310 to 1550 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Nd-YAG Optimized Photodiodes

Product Specs

Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 250 nA
Capacitance:
1 to 5 pF
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
Channels:
Quad
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
2 µm
Operation Mode:
Photoconductive
Dark Current:
1 µm
Capacitance:
90 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
69 mm Solderable Die Siliocon Photodiode

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 700 nm
Operation Mode:
Photovoltaic
Dark Current:
350 to 700 nA
Capacitance:
28 to 1150 nF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Multi Channel X-Ray Detectors and Photoconductive Arrays

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
340 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
800 to 2600 nm Quadrant and Array Photodiodes with 120 nA to 100 µA Dark Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photovoltaic
Dark Current:
120 nA to 100 µA
Capacitance:
20 to 150 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
Configuration:
Array
Channels:
Quad
Module:
No
more info
Silicon PIN Photodiode from 400 to 1150 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
11 to 20 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
0.44 to 0.70 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
BXT1 Series - One Stage Cooled PbSe Packaged IR Detectors

Product Specs

Photodiode Material:
Pbse
Wavelength Range:
4 to 4.2 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 780 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
InGaAs Avalanche photodiode from 0.95 to 1.65 µm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
TO-Can
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 µA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
900 to 1700 nm InGaAs Photodiode with TO-46 Package

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.3 nA
Capacitance:
1.5 to 2 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
TO-Can
Module:
No
more info
Tetra-Lateral PSD’s Position Sensing Detectors (PSD)

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 100 nA
Capacitance:
1625 pF
Responsivity/Photosensitivity:
0.35 to 0.42 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Single
Module:
No
more info
400 to 1100 nm Avalanche Photodetectors wth 0.1 to 1 nA Dark Current

Product Specs

Photodetector Type:
Avalanche
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Module:
No
more info
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