Photodiodes from Manufacturers in United States - Page 35

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 35 of 79
InGaAs Photodiode, 2.5 ns Rise Time, 800-1700 nm, Ø0.5 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
6 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
400 to 1100 nm Avalanche Photodetectors with TO-Can Package

Product Specs

Photodetector Type:
Avalanche
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
TO-Can
Module:
No
more info
Silicon PIN Photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 250 nA
Capacitance:
12 to 20 pF
Responsivity/Photosensitivity:
0.1 to 0.20 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
1 mm2 Photodiode in TO-18 Pkg

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.2 to 2 pF
Responsivity/Photosensitivity:
0.36 to 0.4 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Solderable Chip Series Planar Diffused Silicon Photodiodes

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Capacitance:
95 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 380 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
380 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 5 nA
Capacitance:
3.8 to 11 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Silicon Avalanche photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Capacitance:
2.1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
50 µA
Capacitance:
30000 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
0.25 mm Diameter InGaAs Photodiode

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
Photovoltaic Devices

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
2000 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
800 to 2600 nm Quadrant and Array Photodiodes with 23 to 72 µA Dark Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
23 to 72 µA
Capacitance:
60 to 750 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
Configuration:
Array
Channels:
Quad
Module:
No
more info
Silicon photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
25 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Through-Hole
Module:
No
more info
EUV & UV Detectors (SXUV & UVG Family)

Product Specs

Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Capacitance:
1.55 to 3 nF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 350 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 10 nA
Capacitance:
30 to 90 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
InGaAs PIN photodiode from 1310 to 1550 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.22 to 0.3 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Chip, Die
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
0.1 µA
Capacitance:
21 pF
Responsivity/Photosensitivity:
0.26 to 0.87 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
17.6 x 3.9 mm Solderable Die Silicon Photodiode

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 50 nA
Capacitance:
300 pF
Responsivity/Photosensitivity:
0.62 to 0.7 A/W
Package Type:
Die
Module:
No
more info
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