Photodiodes from Manufacturers in United States - Page 37

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 37 of 79
Calibrated Ge Photodiode, 800 - 1800 nm, Ø3.0 mm Active Area

Product Specs

Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 4 uA
Capacitance:
3250 to 4000 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
0.1 mm Diameter Active Area InGaAs Photodiode

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
Surface Mount
Module:
No
more info
Photoconductive Devices

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.15 nA
Capacitance:
1 to 4 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
400 to 1100 nm Quadrant and Array Photodiodes with 0.5 to 1 nA Dark Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
3.5 to 25 pF
Responsivity/Photosensitivity:
0.22 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Quad
Module:
No
more info
Solderable Chip Series Planar Diffused Silicon Photodiodes

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
300 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon photodiode from 400 to 1100 nm

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
<5 to 10 nA
Capacitance:
<120 pF
Responsivity/Photosensitivity:
0.70 A/W
Package Type:
Chip
Configuration:
Array
Module:
No
more info
12 mm2 Photodiode in TO-8 Hermetic Pkg

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 7 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 780 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
17 to 48 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Silicon Avalanche photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
Package Type:
TO-Can
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 µm
Capacitance:
1000 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
5 mm Diameter Active Area InGaAs Photodiode with TO-8 Package

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
2000 nA
Capacitance:
1100 pF
Responsivity/Photosensitivity:
0.3 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Blue Enhanced Photodiodes

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
8800 pF
Responsivity/Photosensitivity:
0.15 to 0.20 A/W
Package Type:
Module with Connector
Configuration:
Array
Channels:
Single
Module:
Yes
more info
600 to 1750 nm Quadrant and Array Photodiodes with 0.13 nA Dark Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photovoltaic
Dark Current:
0.13 nA
Capacitance:
107 pF
Responsivity/Photosensitivity:
0.55 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Quad
Module:
No
more info
Silicon Avalanche Photodiode 905 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
20 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
8.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Electron & Photon Detectors (AXUV Family) X-Ray and Radiation

Product Specs

Wavelength Range:
0.01 to 190 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
1 to 3 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 350 to 1120 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
850 nm GaAs PIN photodiode

Product Specs

Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.34 to 0.45 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Chip, Die
Module:
No
more info
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