Photodiodes from Manufacturers in United States - Page 39

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 39 of 79
Tetra-Lateral PSD’s Position Sensing Detectors (PSD)

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 100 nA
Capacitance:
1625 pF
Responsivity/Photosensitivity:
0.35 to 0.42 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Single
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
20 µA
Capacitance:
270 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
231.6 mm Very Large Solderable Die Silicon Photodiode

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
350 to 700 nA
Capacitance:
775 to 1150 pF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Broadband Anti-Reflection Coated InGaAs Photodiodes

Product Specs

Photodiode Material:
InGaAs, InP
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Surface Mount
Channels:
Single
Module:
No
more info
350 to 1100 nm Quadrant and Array Photodiodes with 3 to 30 nA Dark Current

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 30 nA
Capacitance:
80 to 330 pF
Responsivity/Photosensitivity:
0.18 to 0.53 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Quad
Module:
No
more info
InGaAs Avalanche Photodiode from 1000 to 1700 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
1.45 pF
Responsivity/Photosensitivity:
9.4 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
AT2 Series - Two Stage Cooled PbS Packaged IR Detectors

Product Specs

Photodiode Material:
Pbse
Wavelength Range:
4.1 to 4.3 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 640 to 1060 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
640 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 3 nA
Capacitance:
5 to 12 pF
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Silicon PIN photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 200 pA
Capacitance:
20 to 90 pF
Responsivity/Photosensitivity:
0.07 to 0.59 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.9 µA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
16 mm Avlanche Photodiodes with 130 pF Capacitance

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
120 to 1000 nm
Operation Mode:
Photovoltaic
Dark Current:
600 to 1200 nA
Capacitance:
130 pF
Responsivity/Photosensitivity:
25 to 35 A/W
Package Type:
Connectorized
Module:
No
more info
155Mbps/622Mbps/1.25Gbps/2.5Gbps High Speed InGaAs Photodiodes

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2
Capacitance:
2 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
400 to 1100 nm Avalanche Photodetectors with Surface Mount Package

Product Specs

Photodetector Type:
Avalanche
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Module:
No
more info
Silicon photodiode from 400 to 1100 nm

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
100 nA
Capacitance:
0.35 nF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
AT2 Series - Two Stage Cooled PbS Packaged IR Detectors

Product Specs

Photodiode Material:
Pbse
Wavelength Range:
4.1 to 4.3 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 790 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
790 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.8 pF
Responsivity/Photosensitivity:
0.55 to 0.6 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
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