Photodiodes from Manufacturers in United States - Page 54

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 54 of 79
Solderable Chip Series Planar Diffused Silicon Photodiodes

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
2100 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
3 µA
Capacitance:
1200 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
100 mm Active Area Silicon PIN Photodiode with Ceramic Package

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
6 to 30 nA
Capacitance:
500 to 1700 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
Package Type:
Ceramic
Module:
No
more info
155Mbps/622Mbps/1.25Gbps/2.5Gbps High Speed InGaAs Photodiodes

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.50 to 20 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
600 to 1750 nm InGaAs PIN Photodiodes with 0.1 to 2000 nA Current

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 2000 nA
Capacitance:
6 to 60 pF
Responsivity/Photosensitivity:
0.2 to 0.7 A/W
Package Type:
Surface Mount
Module:
No
more info
InP Avalanche Photodiode from 1100 to 1700 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InP
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
45 to 150 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Silicon PIN Photodiode from 430 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Silicon Avalanche photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
4 to 15 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
4.1 mm Active Area PIN Silicon Photodiode with Leaded Package

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 20 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
Leaded
Module:
No
more info
High Speed InGaAs Arrays

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic, submount
Configuration:
Array
Channels:
Multiple
Module:
No
more info
400 to 1100 nm Silicon Photodetectors with 10 nA Dark Current

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
6 to 12 pF
Responsivity/Photosensitivity:
0.18 to 0.58 A/W
Package Type:
TO-Can
Module:
No
more info
Silicon Avalanche Photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 200 nA
Capacitance:
3 to 5 pF
Responsivity/Photosensitivity:
4 to 70 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Silicon PIN Photodiode from 780 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.5 to 3.3 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Silicon PIN photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 200 pA
Capacitance:
20 to 90 pF
Responsivity/Photosensitivity:
0.07 to 0.59 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
3 µA
Capacitance:
85 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
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