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G10899-003K

Photodiode by Hamamatsu Photonics
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The G10899-003K from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.5 to 1.7 µm, Capacitance 10 to 15 pF, Dark Current 0.3 to 1.5 nA, Responsivity/Photosensitivity 0.15 to 1 A/W, Active Area Diameter 0.3 mm. More details for G10899-003K can be seen below.

Product Specifications

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Product Details

  • Part Number
    G10899-003K
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.5 to 1.7 µm

Applications

  • Application
    Spectroanalysis, Thermometer

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    150 to 300 MHz
  • Detectivity
    1 x 1012 cm x Hz/W to 5 x 1012 cm x Hz/W
  • Forward Current
    10 mA
  • Module
    No
  • Noise equivalent power(NEP) :
    5 x 10-15 W/Hz to 2 x 10-14 W/Hz
  • Package
    TO-18
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.5 to 1.7 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Reverse Voltage
    5 V
  • Shunt Resistance
    100 to 1000 MOhms
  • Spectral Band
    VIS-NIR
  • Capacitance
    10 to 15 pF
  • Dark Current
    0.3 to 1.5 nA
  • Responsivity/Photosensitivity
    0.15 to 1 A/W

Physical Properties

  • Window Material
    Borosilicate glass
  • Active Area Diameter
    0.3 mm

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Temperature Coefficient
    1.07 times/Degree C

Technical Documents
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