G10899-02K

Photodiode by Hamamatsu Photonics

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The G10899-02K from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.5 to 1.7 µm, Capacitance 300 to 800 pF, Dark Current 5 to 25 nA, Responsivity/Photosensitivity 0.15 to 1 A/W, Active Area Diameter 2 mm. More details for G10899-02K can be seen below.

Product Specifications

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Product Details

  • Part Number
    G10899-02K
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.5 to 1.7 µm

Applications

  • Application
    Spectroanalysis, Thermometer

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    4 to 10 MHz
  • Detectivity
    1 x 1012 cm x Hz/W to 5 x 1012 cm x Hz/W
  • Forward Current
    10 mA
  • Module
    No
  • Noise equivalent power(NEP) :
    3 x 10-14 W/Hz to 2 x 10-13 W/Hz
  • Package
    TO-5
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.5 to 1.7 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Reverse Voltage
    2 V
  • Shunt Resistance
    2.5 to 25 MOhms
  • Spectral Band
    VIS-NIR
  • Capacitance
    300 to 800 pF
  • Dark Current
    5 to 25 nA
  • Responsivity/Photosensitivity
    0.15 to 1 A/W

Physical Properties

  • Window Material
    Borosilicate glass
  • Active Area Diameter
    2 mm

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Temperature Coefficient
    1.07 times/Degree C

Technical Documents

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