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G6849-01

Photodiode by Hamamatsu Photonics
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The G6849-01 from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.9 to 1.7 µm, Capacitance 25 to 40 pF, Dark Current 0.15 to 1.5 nA, Responsivity/Photosensitivity 0.8 to 0.95 A/W, Active Area Diameter 1 mm. More details for G6849-01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G6849-01
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.9 to 1.7 µm

Applications

  • Application
    Light spot position detection, Measurement equipment

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    80 to 120 MHz
  • Detectivity
    1 x 1012 cm x Hz/W to 5 x 1012 cm x Hz/W
  • Module
    No
  • Noise equivalent power(NEP) :
    1 x 10-14 W/Hz to 4 x 10-14 W/Hz
  • Package
    TO-5
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.9 to 1.7 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Reverse Voltage
    5 V
  • Shunt Resistance
    80 to 200 MOhms
  • Spectral Band
    NIR
  • Capacitance
    25 to 40 pF
  • Dark Current
    0.15 to 1.5 nA
  • Responsivity/Photosensitivity
    0.8 to 0.95 A/W

Physical Properties

  • Window Material
    Borosilicate glass
  • Active Area Diameter
    1 mm

Temperature

  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Temperature Coefficient
    1.09 times/Degree C

Technical Documents
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