G7151-16

Photodiode by Hamamatsu Photonics

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The G7151-16 from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.9 to 1.7 µm, Capacitance 10 to 20 pF, Dark Current 0.2 to 1 nA, Responsivity/Photosensitivity 0.85 to 0.95 A/W. More details for G7151-16 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G7151-16
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.9 to 1.7 µm

Applications

  • Application
    Near infrared (NIR) spectrophotometers

General Parameters

  • Configuration
    Array
  • Cut-Off Frequency
    100 to 300 MHz
  • Detectivity
    1 x 1012 cm x Hz/W to 5 x 1012 cm x Hz/W
  • Module
    No
  • Noise equivalent power(NEP) :
    5 x 10-15 W/Hz to 2 x 10-14 W/Hz
  • Package
    18-pin DIP
  • Package Type
    DIP
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.9 to 1.7 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Reverse Voltage
    5 V
  • Shunt Resistance
    100 to 1000 MOhms
  • Spectral Band
    NIR
  • Capacitance
    10 to 20 pF
  • Dark Current
    0.2 to 1 nA
  • Responsivity/Photosensitivity
    0.85 to 0.95 A/W

Physical Properties

  • Active Area
    0.08 x 0.2 mm
  • Window Material
    Borosilicate glass

Temperature

  • Operating Temperature
    -25 to 70 Degree C
  • Storage Temperature
    -25 to 70 Degree C
  • Temperature Coefficient
    1.09 times/Degree C

Technical Documents

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