G8370-85

Photodiode by Hamamatsu Photonics

Note: Your Quotation Request will be directed to Hamamatsu Photonics.

The G8370-85 from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.9 to 1.7 µm, Capacitance 3500 pF, Dark Current 25 to 125 nA, Responsivity/Photosensitivity 0.8 to 1.1 A/W, Active Area Diameter 5 mm. More details for G8370-85 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G8370-85
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.9 to 1.7 µm

Applications

  • Application
    Laser monitor, Optical power meter, Laser diode life test

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    0.6 MHz
  • Detectivity
    5 x 1012 cm x Hz/W
  • Module
    No
  • Noise equivalent power(NEP) :
    1 x 10-13 W/Hz
  • Package
    TO-8
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photovoltaic
  • Wavelength Range
    0.9 to 1.7 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Reverse Voltage
    1 V
  • Shunt Resistance
    3 MOhms
  • Spectral Band
    NIR
  • Capacitance
    3500 pF
  • Dark Current
    25 to 125 nA
  • Responsivity/Photosensitivity
    0.8 to 1.1 A/W

Physical Properties

  • Active Area Diameter
    5 mm

Temperature

  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents

Click to view more product details on manufacturer's website
Request a Quote