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The S1337-66BQ from Hamamatsu Photonics is a Photodiode with Wavelength Range 190 to 1100 nm, Capacitance 380 pF, Dark Current 100 pA, Responsivity/Photosensitivity 0.1 to 0.5 A/W, Rise Time 1 µs. More details for S1337-66BQ can be seen below.
200 nm - 1100 nm, Photodiode for Electron Detection Applications
800 nm - 2600 nm, InGaAs PIN Photodiode for LiDAR Applications
400 nm - 1000 nm, Si Avalanche Photodiode for Fluorescence Applications
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