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The S16008-33 from Hamamatsu Photonics is a Photodiode with Wavelength Range 380 to 1100 nm, Capacitance 0.7 to 1 pF, Dark Current 0.01 to 5 pA, Responsivity/Photosensitivity 640 mA/W, Rise Time 1.5 µs. More details for S16008-33 can be seen below.
200 nm - 1100 nm, Photodiode for Electron Detection Applications
800 nm - 2600 nm, InGaAs PIN Photodiode for LiDAR Applications
400 nm - 1000 nm, Si Avalanche Photodiode for Fluorescence Applications
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