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SAR3000H1B

Photodiode by Laser Components
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The SAR3000H1B from Laser Components is a Photodiode with Wavelength Range 400 to 1000 nm, Bandwidth DC to 10 MHz, Active Area Diameter 3 mm. More details for SAR3000H1B can be seen below.

Product Specifications

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Product Details

  • Part Number
    SAR3000H1B
  • Manufacturer
    Laser Components
  • Description
    Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm

Applications

  • Application
    Rangefinding / LIDAR, Optical communication systems, Laser scanners, Spectroscopy, Fluorescence, Medical

General Parameters

  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    30 to 55 fW/vHz
  • Package
    TO-8
  • Package Type
    TO-Can
  • Photodetector Type
    Avalanche
  • Operation Mode
    Photovoltaic
  • Wavelength Range
    400 to 1000 nm
  • Photodiode Material
    Silicon, InGaAs
  • Power Consumption
    300 mW
  • Supply Current
    30 mA
  • Supply Voltage
    ±6.5 V
  • Bandwidth
    DC to 10 MHz
  • Voltage Responsivity
    2.7 to 5 MV/W
  • Note
    Output noise density: 150 nV/vHz, Input referred noise density: 1.5 pA/vHz, Output offset voltage: 0.1 V

Physical Properties

  • Active Area Diameter
    3 mm

Temperature

  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 100 Degree C

Technical Documents
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