FCI-InGaAs-120-XX-XX

Photodiode by OSI Optoelectronics

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The FCI-InGaAs-120-XX-XX from OSI Optoelectronics is an InGaAs Photodiode that has a spectral range of 900 nm - 1700 nm. It has an active area diameter of 120 μm and a responsivity of 0.90 A/W (at 1310 nm) & 0.95 A/W (at 1550 nm). This photodiode has a rise/fall time of 0.3 ns and dark current of 0.05 nA. It has a back-reflection of -40 dB and noise equivalent power (NEP) of 4.5 x 10-15. This photodiode has a ceramic substrate with a capacitance of 1 pF and maximum forward current of 5 mA. 

The FCI-InGaAs-120-XX-XX has a reverse voltage of up to 20 V and maximum reverse current of 20 mA. It supports single mode (SM) or multi-mode (MM) fibers and is compatible with FC connectors. This photodiode is available in a hermetically sealed TO-46 lens cap package and is ideal for high speed optical communications, gigabit ethernet/fibre channel, SONET/SDH, ATM, optical power monitoring & instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    FCI-InGaAs-120-XX-XX
  • Manufacturer
    OSI Optoelectronics
  • Description
    900 nm - 1700 nm, InGaAs Photodiode for Power Monitoring Applications

Applications

  • Application
    High Speed Optical Communications, Gigabit Ethernet/Fibre Channel, SONET/SDH, ATM, Optical Power Monitoring / Instrumentation

Connections & Interface

  • Optical Connector
    FC, SC, ST

General Parameters

  • Configuration
    Single
  • Fall Time
    0.3 ns
  • Forward Current
    5 mA
  • Module
    No
  • Noise equivalent power(NEP) :
    0.0000000000000045 W/vHz
  • Package
    Ceramic, TO-46
  • Package Type
    Ceramic, TO-Can Pigtail
  • Operation Mode
    Photoconductive
  • Wavelength Range
    900 to 1700 nm
  • Photodiode Material
    InGaAs
  • Reverse Current
    2 mA
  • Reverse Voltage
    20 V
  • Rise/Fall Time
    0.3 ns
  • Capacitance
    1 pF
  • Dark Current
    0.05 to 2 nA
  • Responsivity/Photosensitivity
    0.8 to 0.95 A/W
  • Rise Time
    0.3 ns

Physical Properties

  • Active Area Diameter
    120 µm

Temperature

  • Operating Temperature
    0 to 75 Degree C
  • Storage Temperature
    -20 to 90 Degree C

Technical Documents

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