FPA-640x512-TE2

SWIR Sensor by ANDANTA

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The FPA-640x512-TE2 from ANDANTA is an InGaAs/InP SWIR Sensor that has a spectral response range of 0.9 μm - 1.7 μm. It has a resolution of 640 (H) x 512 (V) pixels and pixel size of 25 μm x 25 μm. This image sensor has an image size of 16 mm x 12.8 mm and a quantum efficiency greater than 70%. It has a dark current of less than 0.2 pA and fill factor of over 99%. This image sensor has an adjacent pixel crosstalk below 1% and a detectivity of up to 7.5 x 1012 Jones. It has a maximum pixel rate of 10 MHz and pixel operability greater than 99%.

The FPA-640x512-TE2 has a gain of 23.6 μV/e- (high gain) & 1.26 μV/e- (low gain) and full well capacity of 118 ke- (high gain) & 1.9 Me- (low gain). It has a response nonuniformity of less than 10% and nonlinearity of below 2%. This image sensor is available in a 28-pin metal DIP package that measures 63.5 mm x 25.40 mm x 10.65 mm and is ideal for near-infrared imaging, imaging spectroscopy, covert surveillance, semiconductor inspection, medical science, biology, fiber optic telecommunication, astronomy, scientific, industrial thermal imaging & moisture mapping applications.

Product Specifications

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Product Details

  • Part Number
    FPA-640x512-TE2
  • Manufacturer
    ANDANTA
  • Description
    0.9 µm - 1.7 µm, InGaAs/InP SWIR Sensor for Spectroscopy Applications

General Parameters

  • SWIR Type
    InGaAs SWIR Sensor
  • Sensor Technology
    Standard InGaAs/InP
  • Total Number of Pixels
    640 x 512 pixels
  • Sensor Type
    Area Scan Sensor
  • Dark Current
    <0.2 pA
  • Pixel Size(H x V)
    25 x 25 µm
  • Cooling
    Thermoelectric Cooled
  • Image Size
    16 x 12.8 mm
  • Package Type
    DIP
  • Package
    28-pin Metal DIP
  • Array Operability
    >99%
  • Clock Pulse rise/fall times
    10 ns
  • Clock Pulse Voltage
    0 to 5.5 V
  • Detectivity
    >7.5 x 1012 Jones
  • Full Well Capacity
    1.9 M e, 118 K e-
  • Maximum Pixel Rate
    10 MHz
  • Photoresponse Nonuniformity
    <10%
  • Power Consumption
    325 mW
  • Quantum Efficiency :
    >70%
  • Resolution
    640 (H) x 512 (V)
  • Clock Frequency
    10 MHz
  • Spectral Response Range
    0.9 to 1.7 µm
  • Supply Voltage
    0 to 5.5 V
  • Supply Current
    1 to 80 mA
  • Note
    Integration Time: 5 to 16 ms

Applications

  • Application
    Near-infrared Imaging, Imaging Spectroscopy, Covert Surveillance, Semiconductor Inspection, Medical Science and Biology, Fiberoptic Telecommunication, Astronomy and Scientific, Industrial Thermal Imaging, Moisture Mapping

Physical Properties

  • Weight
    24.5 g

Environmental Conditions

  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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