G11620-512SA

SWIR Sensor by Hamamatsu Photonics

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The G11620-512SA from Hamamatsu Photonics is an InGaAs Linear SWIR Sensor that has a spectral response of 0.95 µm - 1.67 µm. It has an effective pixel resolution of 512 pixels and a peak sensitivity wavelength of 1.55 µm. This NIR image sensor has a pixel size of 25 µm x 500 µm, pixel pitch of 25 µm, and an image size of 12.8 mm x 0.5 mm. It has a readout noise of 200 (at 10 ms) & 300 µV rms (at 1 ms) and dynamic range of 14000. This image sensor has a photosensitivity of 0.82 A/W and photoresponse non-uniformity of ± 5% at an integration time of 1 ms & 10 ms.

The G11620-512SA features a single-chip CMOS readout architecture and integrates the charge amplifiers, shift register & timing generator onto one chip using bump-bonding technology. It has a saturation output voltage of 2.8 V and conversion efficiency of 16 nV/e- & 160 nV/e-. This image sensor has a dark output of ± 0.05 V/s and dark current of ± 0.5 pA. It has an operation frequency of 1 MHz and video data rate of 0.1 MHz - 5 MHz.

The G11620-512SA has a one-stage thermoelectric cooler that requires a maximum allowable current of 1.8 A and voltage of 5 V. It has a built-in saturation countermeasure circuit, CDS circuit, and thermistor with a resistance of 10 kOhms. This image sensor has a sapphire window with an anti-reflective coating. It requires a DC supply voltage of 5 V and consumes 55 mA & 80 mA of current. It is available in a 28-pin metal package that measures 63.5 mm ± 0.15 mm (L) x 25.4 mm ± 0.15 mm (W) x 6.15 mm ± 0.2 mm (H) and is ideal for near-infrared multichannel spectrophotometry, radiation thermometers, and non-destructive inspection equipment applications.

Product Specifications

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Product Details

  • Part Number
    G11620-512SA
  • Manufacturer
    Hamamatsu Photonics
  • Description
    0.95 µm - 1.67 µm, InGaAs SWIR Sensor for Non-Destructive Inspection

General Parameters

  • SWIR Type
    InGaAs SWIR Sensor
  • Sensor Technology
    Indium Gallium Arsenide (InGaAs)
  • Total Number of Pixels
    256 pixels
  • Sensor Type
    Line Scan Sensor
  • Number of Effective Pixels
    256 pixels
  • Dark Current
    ±0.5 to ±5 pA
  • Pixel Size(H x V)
    25 x 500 µm
  • Pixel Pitch
    25 µm
  • Cooling
    Single Stage TE Cooled
  • Image Size
    12.8 x 0.5 mm
  • Line Rate
    9150 lines/s
  • Package Type
    Hermatically Sealed, Chip
  • Package
    28-pin metal
  • Clock Pulse rise/fall times
    20 to 30 ns
  • Clock Pulse Voltage
    0.4 to 5.3 V
  • Conversion Efficiency
    16 to 160 nV/e
  • Current Consumption
    55 to 80 mA
  • Dark Output (nonuniformity)
    ±0.05 to ±0.5 V/s
  • Defective Pixels
    0.01
  • Input stage amplifier reference voltage
    3.9 to 4.1 V
  • Operating Frequency
    0.1 to 5 MHz
  • Output Impedance
    5 kOhms
  • Peak Sensitivity Wavelength
    1.55 µm
  • Photoresponse Nonuniformity
    ±5 to ±10%
  • Readout Noise
    200 to 500 µV rms
  • Reset pulse rise/fall times
    20 to 30 ns
  • Reset Pulse Width
    6 to 28 clocks
  • Saturation Charge
    16.8 to 175 Me-
  • Saturation Output Voltage
    2.7 to 2.8 V
  • Thermistor B Constant
    3660 K
  • Thermistor Power Dissipation
    400 mW
  • Thermistor Resistance
    9 to 11 kOhms
  • Video line reset voltage
    3.9 to 4.1 V
  • Window Material
    Sapphire with AR coating
  • Clock Frequency
    0.1 to 5 MHz
  • Clock Pulse Width
    60 to 5000 ns
  • Data Rate
    0.1 to 5 MHz(Video)
  • Responsivity/Photosensitivity
    0.7 to 0.82 A/W
  • Spectral Response Range
    0.95 to 1.7 µm
  • Supply Voltage
    4.7 to 5.3 V
  • Supply Current
    55 to 80 mA

Applications

  • Application
    Near infrared multichannel spectrophotometry, Radiation thermometers, Non-destructive inspection equipment.

Environmental Conditions

  • Operating Temperature
    -10 to 60 Degree C
  • Storage Temperature
    -20 to 70 Degree C

Technical Documents

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