Photodiodes from Manufacturers in United States - Page 25
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
900 nm - 1700 nm, InGaAs Photodiode for Power Monitoring Applications
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
more info
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Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Responsivity/Photosensitivity:
0.57 A/W
more info
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700 to 1700 nm Diameter InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
700 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area
800 to 2600 nm InGaAs PIN Photodiodes with 80 nA to 770 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
80 nA to 770 µA
Capacitance:
500 to 3100 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
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Silicon PIN Photodiode from 400 to 1100 nm
Electron & Photon Detectors (AXUV Family) X-Ray and Radiation
Calibrated Si Photodiode, 350 - 1100 nm, 3.6 x 3.6 mm Active Area
Silicon PIN Photodiode from 750 to 1050 nm
Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Responsivity/Photosensitivity:
0.57 A/W
more info
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220 to 320 nm GaN UV Photodiode with 0.12 A/W Responsitvity
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
220 to 320 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Responsivity/Photosensitivity:
0.12 A/W
more info
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900 to 1700 nm Back-Illuminated InGaAs Photodiode/Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Responsivity/Photosensitivity:
0.80 to 0.85 A/W
Package Type:
Ceramic, Surface Mount
more info
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800 to 2600 nm InGaAs PIN Photodiodes with 40 to 45 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
40 to 45 µA
Capacitance:
20 to 160 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
Similar products from this company
Silicon PIN Photodiode from 400 to 1150 nm
361 - 375 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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