Photodiodes from Manufacturers in United States - Page 26
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
Electron & Photon Detectors (AXUV Family) X-Ray and Radiation
Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
Silicon PIN Photodiode from 660 to 1050 nm
900 to 1700 nm Back-Illuminated InGaAs Photodiode/Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Responsivity/Photosensitivity:
0.80 to 0.85 A/W
Package Type:
Ceramic, Surface Mount
more info
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InGaAs PIN photodiode from 1310 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 to 0.55 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
more info
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900 to 1700 nm Diameter InGaAs Photodiode with Surface Mount Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
75 to 100 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
Surface Mount
more info
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220 to 358 nm UV Detectors with 0.1 to 10 pA Dark Current
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
220 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 pA
Responsivity/Photosensitivity:
0.013 to 0.13 A/W
more info
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Silicon PIN Photodiode from 650 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
650 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.05 nA
Responsivity/Photosensitivity:
0.47 A/W
Package Type:
Through-Hole
more info
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BXF Series - Uncooled PbSe Flat Plate IR Detectors
InGaAs Photodiode, 14 ns Rise Time, 800-1700 nm, Ø2 mm Active Area
Silicon PIN Photodiode from 430 to 1100 nm
GaAs PIN photodiode from 830 to 880 nm
Photodiode Material:
GaAs
Wavelength Range:
830 to 880 nm
Operation Mode:
Photoconductive
Capacitance:
1.2 to 1.5 pF
Responsivity/Photosensitivity:
0.4 to 0.5 A/W
Package Type:
Connectorized
more info
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220 to 370 nm GaN UV Photodiode with 0.18 A/W Responsitvity
Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
220 to 370 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 pA
Responsivity/Photosensitivity:
0.18 A/W
more info
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High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
376 - 390 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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