C30956EH

Photodiode by Excelitas Technologies

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The C30956EH from Excelitas Technologies is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 10 to 12 pF, Dark Current 100 to 200 nA, Responsivity/Photosensitivity 2.8 to 45 A/W, Active Area Diameter 3 mm. More details for C30956EH can be seen below.

Product Specifications

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Product Details

  • Part Number
    C30956EH
  • Manufacturer
    Excelitas Technologies
  • Description
    Silicon Avalanche Photodiode from 400 to 1100 nm

Applications

  • Application
    Range finding, LIDAR, YAG Laser Detection

General Parameters

  • Breakdown Voltage
    325 to 500 V
  • Configuration
    Single
  • Forward Current
    5 to 50 mA
  • Module
    No
  • Package
    TO-8
  • Package Type
    TO-Can
  • Photodetector Type
    Avalanche
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon
  • Quantum Efficiency
    5 to 85%
  • Rise/Fall Time
    2 to 3.5 ns
  • RoHs
    Yes
  • Capacitance
    10 to 12 pF
  • Dark Current
    100 to 200 nA
  • Responsivity/Photosensitivity
    2.8 to 45 A/W

Physical Properties

  • Active Area
    7 mm
  • Active Area Diameter
    3 mm

Temperature

  • Operating Temperature
    -40 to 70 Degree C
  • Storage Temperature
    -60 to 100 Degree C
  • Temperature Coefficient
    2.4 V/Degree C

Technical Documents

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