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| New Photonics Products this Week |
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| 975 nm CW Fabry Perot Laser Diode |
Laser Diode
from Sheaumann Laser
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| The M9-975-0300-XXX from Sheaumann is a CW Fabry Perot (FP) Laser Diode that operates at 975 nm. This single spatial mode laser diode delivers an optical output power of up to 300 mW and has a slope efficiency of 0.9 W/A. It has a vertical beam divergence angle (FWHM) of 30 degrees and a lateral beam divergence angle (FWHM) of 8 degrees. This laser has a forward voltage of 1.7 to 2.2 V and a threshold current of 38 to 55 mA. It is available in a Ø9 mm TO-can package. |
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| White Picosecond Pulsed Laser from 40 to 2000 nm |
Laser
from Edinburgh Instruments
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| The AGILE from Edinburgh Instruments is a White Picosecond Pulsed Laser that operates at a wavelength from 400 to 2000 nm. It provides a pulsed output power of up to 0.51 mW with a pulse width of up to 350 ps, a repetition rate of 10-1000 kHz and power stability better than 2%. This unpolarised laser uses Time-Correlated Single Photon Counting (TCSPC) technique to resolve fluorescence lifetimes from a few picoseconds to microseconds. |
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| 405 nm Fiber-Coupled Diode Laser Module |
Laser
from FrankFurt Laser Company
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| The FACH-450-25W-FC105-AC from FrankFurt Laser Company is a Fiber-Coupled Diode Laser Module that operates at a wavelength of 450 nm. It delivers a CW output power of over 25 W and has a spectral width of less than 15 nm FWHM. This laser has a fiber with a core diameter of 105 μm and a numerical aperture of 0.22. It has a threshold current of 0.3-0.5 A and a conversion efficiency of over 18%. This laser has temperature sensors and is TEC temperature regulated. |
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| Mono/RGB-NIR CMOS Image Sensor for NIR Detection |
CMOS Image Sensor
from Canon U.S.A
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| The LI3030SA from Canon is a Mono/RGB-NIR CMOS Image Sensor that has a resolution of 2160 x 1280. It has a rolling shutter that delivers a data rate of up to 98 fps and has a sensitivity of 2,900,000 e/lx/sec (monochrome) and up to 1,100,00 e/lx/sec (RGB-NIR). This image sensor features 19 µm pixels, each with an expanded well depth for greatly enhanced quantum efficiency (QE) for increased NIR detection. It uses 16-channel analog output interfaces. |
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Product Details
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| 4450 nm InAsSb Photodiode with Band-Pass Filter |
Photodiode
from Hamamatsu Photonics
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| The P13243-045MF from Hamamatsu Photonics is an InAsSb Photodiode that operates at a wavelength of 4450 nm. It has a photosensitivity of 3.7 mA/W with a spectral response of 350 nm FWHM and a detectivity of 8.2 x 10⁸ cm·Hz^½/W. This photodiode has a 4.45 μm band-pass filter and a photosensitive area of 0.7 x 0.7 mm with an 82 degree field-of-view. It has a rise time of 15 ns and a noise equivalent power of 8.5 x 10^-11 W/Hz^½ with a shunt resistance of 300 kΩ. |
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Product Details
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| Latest Photonics News this Week |
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| AIM Photonics Receives $321 M to Boost Research for Critical Defense Applications |
American Institute of Manufacturing Photonics
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| Governor Kathy Hochul has announced that the American Institute of Manufacturing Photonics has secured a new 7 year cooperative agreement with the Air Force Research Laboratory and the Research Foundation of the State University of New York, which includes support totaling more than $321 million. This includes $165 million awarded by AFRL on behalf of DoD and $156 million from other sources. |
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| Toshiba Develops World’s First Chip-Based Quantum Key Distribution (QKD) System |
Toshiba Europe
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| Toshiba Europe has announced it has developed the world’s first chip-based quantum key distribution (QKD) system. This advancement will enable the mass manufacture of quantum security technology, bringing its application to a much wider range of scenarios, including IoT solutions. QKD addresses the demand for cryptography which will remain secure from attack by the supercomputers of tomorrow. |
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