| Top Optical Detectors |
|
|
| 750 nm - 850 nm, Terahertz Photoconductive Antenna for Imaging Applications | |
Photoconductive Antenna
from Terahertz Store
|
| The T-Era-20D-800-Air from Terahertz Store is a Terahertz Photoconductive Antenna that operates at a wavelength of 750 nm - 850 nm (excitation). It delivers an average optical power of 1 mW - 15 mW and has a spectrum bandwidth of 2.5 THz. This photoconductive antenna is ideal for terahertz spectroscopy & imaging, sensing, and electronic chip fault analysis in THz time domain systems. |
| |
Download Datasheet
Product Details | |
|
|
|
| 780 nm LT-GaAs Photoconductive Antenna for Spectroscopy Applications | |
Photoconductive Antenna
from TYDEX
|
| The PCA-D-50-7.2-780 from TYDEX is an LT-GaAs Photoconductive Antenna that operates at a wavelength of 780 nm. It delivers a maximum output power of 30 mW and has a pulse duration of 120 fs. This photoconductive antenna has a dynamic range of 60 dB (at 0.5 THz) and dark current of 0.2 mA. It is ideal for industrial terahertz imaging and spectroscopy system applications. |
| |
Download Datasheet
Product Details | |
|
|
|
| 700 nm - 1100 nm, Photodetector for Photometry Applications | |
Photodetector
from Opto Diode Corporation
|
| The ODA-6WB-100M from Opto Diode Corporation is a Photodetector that operates at a wavelength of 400 nm - 1100 nm. It has a frequency response range of 1000 Hz (at -3 dB) and sensitivity of 20 V/μW. This photodetector has an active area of 5.87 mm2 and a transimpedance gain of 100 MOhms. It is ideal for photometry & colorimetry, pulse oximetry, and bar code reader applications. |
| |
Download Datasheet
Product Details | |
|
|
|
| 800 nm - 2600 nm, InGaAs PIN Photodiode for LiDAR Applications | |
Photodiode
from Marktech Optoelectronics
|
| The MTSM2601SMF2-150 from Marktech Optoelectronics is an InGaAs PIN Photodiode that operates at a wavelength of 800 nm - 2600 nm. It has an active area of 1.5 mm and a responsivity of 1.24 A/W. This photodiode has a shunt resistance of 5.56 kOhm and quantum efficiency of 72%. It is ideal for high-speed optical communication, gas/water analysis, LiDAR, and medical applications. |
| |
Download Datasheet
Product Details | |
|
|
|
| 230 nm - 700 nm, Photomultiplier for Single Photon Counting Applications | |
Photomultiplier
from Becker & Hickl
|
| The PMCS-150-110 from Becker & Hickl is a Photomultiplier that operates at a wavelength of 230 nm - 700 nm. It has a detector quantum efficiency of 35% (at 350 nm) and dark count rate of 20 s-1. This photomultiplier has an IRF width of 100 ps or 120 ps and a count rate above 5 MHz (continuous) & 100 MHz (peak). It is ideal for time-correlated single photon counting (TCSPC) applications. |
| |
Download Datasheet
Product Details | |
|
|
|
|
|
| 670 nm Infrared Photoreflector for Edge Detection Applications | |
Photoreflector
from Shinkoh Electronics
|
| The KR1226 from Shinkoh Electronics is an Infrared Photoreflector that operates at a wavelength of 670 nm. It has a rise time of 70 µs and fall time of 95 µs. This photoreflector has a dark current of 1 nA and light current of 150 μA. It has a maximum leak current of 10 μA and reverse current of 10 μA. This photoreceptor is ideal for bar-code reader, edge detection & mark sensor of OCR applications. |
| |
Download Datasheet
Product Details | |
|
|
|
| 560 nm Photoresistor for Light Detection Systems | |
Photoresistor
from Nanyang Lida Optic-electronics
|
| The GT36537 from Nanyang Lida Optic-electronics is a Photoresistor that operates at a wavelength of 560 nm. It has a light resistance of 18 kOhms - 50 kOhms and dark resistance of 2 MOhms. This photoresistor has an operating temperature of 30 deg - 70 deg and a resistance illumination coefficient of 0.7. It requires an AC supply voltage of 100 V and and consumes 50 mW of power. This photoresistor is ideal for light detection system applications. |
| |
Download Datasheet
Product Details | |
|
|
|
| 880 nm Silicon Phototransistor for Detection Applications | |
Phototransistor
from Optrans America
|
| The PTC080M3B from Optrans America is a Silicon Phototransistor that has a peak sensitivity wavelength of 880 nm. It has a spectral range of 400 nm - 1100 nm, switching time (rise/fall) of 10 μs, and an angular response of ± 80 deg. This transistor has a C-E current of 1 mA and collector dark current of up to 100 nA. It is ideal for optical switches, detectors, and sensor applications. |
| |
Download Datasheet
Product Details | |
|
|
|
| 5 µm - 14 µm, Digital Pyroelectric Detector for Flame Detection Applications | |
Pyroelectric Detector
from Broadcom
|
| The AFBR-S6EPY12111B from Broadcom is a Thin Film Digital Pyroelectric Detector that has a filter bandwidth of 5 µm - 14 µm. It has a 5 µm long-pass filter and offers high immunity to electromagnetic interference. This pyroelectric detector uses a digital current-mode read-out to reduce IR-emitter duty cycles and is ideal for gas sensing, flame & motion detection, and gesture recognition applications. |
| |
Download Datasheet
Product Details | |
|
|
|
| 50 GHz - 700 GHz, Terahertz Detector for Research Applications | |
Terahertz Detector
from Terasense Group
|
| The Ultrafast Sub-THz Detector from Terasense Group is a Terahertz Detector that has a spectral range of 50 GHz - 0.7 THz. It has a response time of 150 ps & 2 µs and responsivity of 0.5 V/W & 10 V/W. This terahertz detector has a noise equivalent power of 1 nW/rt(Hz) - 2 nW/rt(Hz) and is ideal for terahertz imaging, non-destructive analysis, and scientific research applications. |
| |
Download Datasheet
Product Details | |
|
