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| | | Top Optical Detectors | | | Date: 09 September 2025 | | | |
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| 1530 nm - 1565 nm, Photodetector for RF Generation Applications | |
Photodetector
from Phase Sensitive Innovations
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| The D4 Series from Phase Sensitive Innovations is a Uni-Traveling Carrier (UTC) Photodetector that operates at a wavelength of 1530 nm - 1565 nm. It has a responsivity of 0.4 A/W and bandwidth of 25 GHz. This photodetector has a high linearity and is ideal for high-speed photodetection, photonic RF generation, multimode photodetection, and microwave photonic link applications. |
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| 850 nm GaAs PIN Photodiode for Fiber Optic Communication Applications | |
Photodiode
from Coherent Corp.
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| The APA1201010000 from Coherent Corp. is a GaAs PIN Photodiode that operates at a wavelength of 850 nm. It has a 3dB-bandwidth of 20 GHz and data rate of up to 25 Gb/s. This single-channel photodiode has an aperture diameter of 40 μm and a responsivity of 0.6 A/W. It has a dark current of 3 pA and is ideal for datacom & parallel multimode fiber optical communication applications. |
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| 900 nm - 1700 nm, PIN Photodiode for Industrial Applications | |
Photodiode
from LD4B
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| The PD4B-200-P20-1G-K from LD4B is a PIN Photodiode that operates at a wavelength of 900 nm - 1700 nm. It has a bandwidth of 1 GHz and responsivity of 1 A/W (at 1550 nm). This photodiode has a capacitance of 3 pF, dark current of 0.05 nA, and return loss of 16 dB & 30 dB. It has a fiber length of 20 cm - 100 cm and is ideal for scientific & industrial applications. |
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| Featured Interview | | Interview with Gustavo Rivas from Cybel, LLC | | GoPhotonics interviewed Gustavo Rivas, the Technical Sales Manager of Cybel, LLC. Gustavo Rivas is an electrical engineer from the District University of Bogota, over the past few years, his focus has been in the photonics industry including the fiber lasers and fiber amplifiers industry. Before Cybel, Gustavo also worked with other companies. Click here to read the full interview. | | | |
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| Single-Photon Avalanche Diode Sensor for Quantum Sensing Applications | |
Photodiode
from Singular Photonics
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| The Andarta from Singular Photonics is a Single-Photon Avalanche Diode (SPAD) Sensor that has a pixel pitch of 10.17 μm. It has a fill factor of 100% (with micro lenses) and pixel array of 512 x 512 pixels & 128 x 128 (macro pixels). This sensor is ideal for Raman spectroscopy, FLIM, time-resolved multispectral beam-scanned imaging, quantum sensing, and microscopy applications. |
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| 800 nm Silicon Phototransistor for Industrial Equipment Applications | |
Phototransistor
from ROHM Semiconductor
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| The SML-H10TB from ROHM Semiconductor is a Silicon Phototransistor that operates at a wavelength of 800 nm. It has a light current of 2 mA - 4 mA and dark current of up to 0.5 µA. This phototransistor has a collector-emitter voltage of 32 V, collector current of 30 mA, and an emitter-collector voltage of 5 V. It is ideal for home appliance & industrial equipment applications. |
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| 880 nm Silicon Phototransistor for Optical Switches & Detectors | |
Phototransistor
from Marktech Optoelectronics
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| The MTD8000M3B-T from Marktech Optoelectronics is a Silicon Phototransistor that has a peak sensitivity wavelength of 880 nm. It has a spectral sensitivity of 400 nm - 1100 nm and switching time (rise/fall) of 10 µs. This phototransistor has a collector-emitter current of 1 mA and is ideal for optical switches, optical sensors & optical detectors. |
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| 750 nm Silicon Phototransistor for Optical Encoder Applications | |
Phototransistor
from Optoi
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| The OIT7C-NR from Optoi is a Silicon Phototransistor that has a peak responsivity of 750 nm. It has an optical pitch of 0.6 mm and electrical pitch of 1.27 mm. This phototransistor has a spectral bandwidth of 500 nm - 950 nm and gain of 600. It has a rise time of 10 μs and is ideal for optical encoders, 12-13 bit absolute encoders, optical receivers, and controls/drives applications. |
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| Featured Article | | What is Pockels Effect? | | Pockels Effect is the linear electro-optic effect in which the refractive index of the medium is modified with respect to an applied electric signal or voltage. This effect was discovered by the German physicist Friedrich Pockels in 1893. It occurs only in non-centrosymmetric crystals, i.e., crystals with inversion symmetry. Click here to read the full article. | | | |
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