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PREV 30 September 2025 NEXT

Electro-Optic Devices Update

30 September 2025 Newsletter - GoPhotonics

Latest Electro-Optic Devices. View it in your browser

New Products Directory News. Whitepapers Articles Calculators Events Interviews
 
GoPhotonics
Top Electro-Optic Devices
Date: 30 September 2025
 
Sponsored by Yokogawa
 
Yokogawa
 
Top Electro-Optic Devices
Electro-Optic Intensity Modulator
1525 nm - 1605 nm, Broadband LiNbO3 Electro-Optic Intensity Modulator
Electro-Optic Intensity Modulator  from Thorlabs Inc

The LNA2124 from Thorlabs Inc. is a Broadband LiNbO3 Electro-Optic Intensity Modulator that operates at a wavelength of 1525 nm - 1605 nm. It has an electro-optic bandwidth of 15 GHz and a minimum operating frequency from DC to 15 GHz. This z-cut electro-optic intensity modulator has an RF half-wave voltage (at 1 GHz) of 4.3 V and a DC bias half-wave voltage (at 1 kHz).
Download Datasheet Product Details
Electro-Optic Intensity Modulator
1310 nm Electro-Optic Intensity Modulator for Quantum Photonics Applications
Electro-Optic Intensity Modulator  from Sintec Optronics

The STOL-IM-1310-10-PM from Sintec Optronics is an Electro-Optic Intensity Modulator that operates at a wavelength of 1310 nm. It has an electro-optical bandwidth of 10 GHz and insertion loss of up to 4.5 dB. This electro-optic intensity modulator has an optical return loss of -45 dB and is ideal for analog modulation, pulse generation, quantum photonics, and active mode locking laser applications.
Download Datasheet Product Details
Electro-Optic Intensity Modulator
1550 nm Electro-Optic Intensity Modulator for Space & Defense Applications
Electro-Optic Intensity Modulator  from iXblue Photonics

The MXAN-LN-05-PD-P-P-FA-FA from iXblue Photonics is an Analog Electro-Optic Intensity Modulator that operates at a wavelength of 1530 nm - 1625 nm. It has an electro-optical bandwidth of 12 GHz and insertion loss of 3.5 dB. This electro-optic intensity modulator has RF drive voltage (at 50 kHz) of 5.5 V and is ideal for RoF, microwave & radar links, space & defence system applications.
Download Datasheet Product Details
Electro-Optic Phase Modulator
LiNbO3 Electro-Optic Phase Modulator for Passive RF Detection Applications
Electro-Optic Phase Modulator  from Phase Sensitive Innovations

The LITHIUM NIOBATE PHASE MODULATORS from Phase Sensitive Innovations is a C-Band Lithium Niobate Electro-Optic Phase Modulator (EOPM) that has a half-wave voltage of 4 V & 6 V (at 10 GHz), 8 V (at 40 GHz), and 14 V (at 100 GHz). It has an optical insertion loss of 2 dB or 4 dB and is ideal for optical phase control & passive RF detection & imaging applications.
Product Details
Electro-Optic Phase Modulator
650 nm - 1000 nm, Electro-Optic Phase Modulator for Spectroscopy Applications
Electro-Optic Phase Modulator  from Photonics Technologies

The EOM-02-6.25-V from Photonics Technologies is a Magnesium Oxide-Doped Lithium Niobate (MgO:LiNbO3) Electro-Optic Phase Modulator that operates at a wavelength of 650 nm - 1000 nm. It has a modulation frequency of 6.25 MHz and is ideal for frequency modulation saturation spectroscopy and to combine with spectroscopic cells for laser locking to atomic or molecular transitions.
Download Datasheet Product Details
Sponsored by Yokogawa
Yokogawa
Wide Wavelength Coverage, High Resolution, Industry-Leading Accuracy
The AQ6374E Optical Spectrum Analyzer offers a broad wavelength range from 350 nm to 1200 nm with high dynamic range and resolution. Ideal for material science and photonic research applications that demand uncompromised accuracy. Click here to learn more.
Electro-Optic Phase Modulator
960 nm - 1100 nm, Electro-Optic Phase Modulator for Sensing Applications
Electro-Optic Phase Modulator  from Beijing Rofea Optoelectronics

The Rof-PM-UV series from Beijing Rofea Optoelectronics is an Electro-Optic Phase Modulator that operates at a wavelength of 960 nm - 1100 nm. It has an operating bandwidth of 10 GHz and RF half-wave voltage of 2 V (at 50 KHz) & 3 V (at 10 GHz). This electro-optic phase modulator is ideal for optical fiber sensing, quantum communication and ROF system applications.
Download Datasheet Product Details
Pockels Cell Driver
3.6 kV Pockels Cell Drivers for Research & Spectroscopy Applications
Pockels Cell Driver  from EKSPLA

The PCD-UHRS series from EKSPLA are Pockels Cell Drivers that have a pulse amplitude of 3.6 kV. They have a maximum repetition rate of 1 MHz & 4.8 MHz (with burst mode) and pulse duration of 25 ns. These pockels cell drivers have a rise/fall time of less than 5.5 ns and are ideal for micromachining, welding, cutting, ophthalmology, research, spectroscopy, and high-energy physics applications.
Download Datasheet Product Details
Pockels Cell Driver
1 kV - 7 kV, Bipolar BBO Pockels Cell Driver for Pulse Management Applications
Pockels Cell Driver  from G&H

The HVR-60010 from G&H is a Bipolar Beta Barium Borate (BBO) Pockels Cell Driver that has a maximum repetition rate of 200 kHz. It has an output voltage of 1 kV - 7.5 kV and amplitude of up to 6 kV. This pockels cell driver has a pulse width of 100 ns - 5 μs and rise & fall time of 10 ns - 15 ns. It is ideal for pulse management in high repetition rate ultrafast laser regenerative amplifiers.
Download Datasheet Product Details
Pockels Cell
1064 nm BBO Pockels Cell for Laser Cavity Dumping Applications
Pockels Cell  from EKSMA Optics

The PCB4S-C-1064 from EKSMA Optics is a Beta Barium Borate (BBO) Pockels Cell that operates at a wavelength of 1064 nm. It has an optical transmission greater than 98% and a clear aperture diameter of 3.5 mm. This pockels cell has a quarter-wave voltage of less than 4.6 kV and is ideal for Q-switching, laser cavity dumping, and pulses coupling into & from regenerative amplifier applications.
Download Datasheet Product Details
Pockels Cell
600 nm - 900 nm, RTP Pockels Cell for Phase/Power Modulation Applications
Pockels Cell  from AGILTRON

The RTPM072A from AGILTRON is a Rubidium Titanyle Phosphate (RTP) Pockels Cell that has a transmission range of 600 nm - 900 nm. It has a clear aperture of 2 mm - 8 mm and half wave voltage of 1120 V. This pockels cell has a maximum damage threshold of 1 MW/cm2 (532 nm) & 600 MW/cm2 (1064 nm) and is ideal for Q-Switch, phase/power modulation & pulse picker applications.
Download Datasheet Product Details
Sponsored by Yokogawa
 
Yokogawa
 
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